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RGTH60TK65D 650v 30a field stop trench igbt *1 pulse width limited by t jmax. l features l inner circuit l outline v ces 650v to-3pfm i c(100c) 17a v ce(sat) (typ.) 1.6v @i c =30a p d 61w 1) low collector - emitter saturation voltage 2) high speed switching 3) low switching loss & soft switching 4) built in very fast & soft recovery frd (rfn - series) l packaging specifications 5) pb - free lead plating ; rohs compliant type packaging tube l applications reel size (mm) - pfc tape width (mm) - ups basic ordering unit (pcs) 450 power conditioner packing code c11 marking RGTH60TK65D ih l absolute maximum ratings (at t c = 25c unless otherwise specified) parameter symbol value unit collector - emitter voltage v ces 650 v gate - emitter voltage v ges ? 30 v collector current t c = 25c i c 28 a t c = 100c i c 17 a pulsed collector current i cp *1 120 a diode forward current t c = 25c i f 28 a t c = 100c i f 16 a diode pulsed forward current i fp *1 120 a power dissipation t c = 25c p d 61 w t c = 100c p d 30 w operating junction temperature t j - 40 to +175 c storage temperature t stg - 55 to +175 c (1) gate (2) collector (3) emitter *1 *1 built in frd (1) (2) (3) (1) (2) (3) 1/11 2016.01 - rev.a downloaded from: http:/// data s he et www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH60TK65D l thermal resistance l igbt electrical characteristics (at t j = 25c unless otherwise specified) parameter symbol values unit min. typ. max. c/w thermal resistance igbt junction - case r (j-c) - - 2.43 c/w thermal resistance diode junction - case r (j-c) - - 3.76 parameter symbol conditions values unit min. typ. max. v collector cut - off current i ces v ce = 650v, v ge = 0v - - 10 a collector - emitter breakdown voltage bv ces i c = 10a, v ge = 0v 650 - - na gate - emitter threshold voltage v ge(th) v ce = 5v, i c = 21.0ma 4.5 5.5 6.5 v gate - emitter leakage current i ges v ge = ? 30v, v ce = 0v - - ? 200 collector - emitter saturation voltage v ce(sat) i c = 30a, v ge = 15v v t j = 25c - 1.6 2.1 t j = 175c - 2.1 - 2/11 2016.01 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH60TK65D l igbt electrical characteristics (at t j = 25c unless otherwise specified) parameter symbol conditions values unit min. typ. max. pf output capacitance c oes v ge = 0v - 66 - reverse transfer capacitance c res f = 1mhz input capacitance c ies v ce = 30v - 1670 - - 27 - total gate charge q g v ce = 300v - 58 - nc gate - emitter charge q ge i c = 30a - 15 - gate - collector charge q gc v ge = 15v - 20 - turn - on delay time t d(on) i c = 30a, v cc = 400v - 27 - ns rise time t r v ge = 15v, r g = 10 - 40 - turn - off delay time t d(off) t j = 25c t d(off) t j = 175c turn - on delay time t d(on) i c = 30a, v cc = 400v - 27 - - 105 - fall time t f inductive load - 47 - reverse bias safe operating area rbsoa i c = 120a, v cc = 520v full square - v p = 650v, v ge = 15v r g = 60, t j = 175c - 120 - fall time t f inductive load - 59 - ns rise time t r v ge = 15v, r g = 10 - 40 - turn - off delay time 3/11 2016.01 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH60TK65D l frd electrical characteristics (at t j = 25c unless otherwise specified) parameter symbol conditions values unit min. typ. max. diode forward voltage v f i f = 20a v t j = 25c - 1.35 1.8 t j = 175c - 1.15 - ns i f = 20a diode peak reverse recovery current i rr v cc = 400v - 6.5 - a di f /dt = 200a/s diode reverse recovery time t rr - 58 - c diode reverse recovery time t rr - 236 - ns i f = 20a diode reverse recovery charge q rr t j = 25c - 0.21 - a di f /dt = 200a/s diode reverse recovery charge q rr t j = 175c - 1.36 - c diode peak reverse recovery current i rr v cc = 400v - 10.7 - 4/11 2016.01 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH60TK65D l electrical characteristic curves fig.2 collector current vs. case temperature collector current : i c [a] case temperature : t c [oc] fig.3 forward bias safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] fig.4 reverse bias safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] fig.1 power dissipation vs. case temperature power dissipation : p d [w] case temperature : t c [oc] 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 0 200 400 600 800 t j 175oc v ge =15v 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 175 t j 175oc v ge 15v 0.01 0.1 1 10 100 1000 1 10 100 1000 t c = 25oc single pulse 10 s 100 s 5/11 2016.01 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH60TK65D l electrical characteristic curves fig.5 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.6 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.7 typical transfer characteristics collector current : i c [a] gate to emitter voltage : v ge [v] fig.8 typical collector to emitter saturation voltage vs. junction temperature collector to emitter saturation voltage : v ce(sat) [v] junction temperature : t j [oc] 0 20 40 60 80 100 120 0 1 2 3 4 5 t j = 175oc v ge = 20v v ge = 12v v ge = 10v v ge = 8v v ge = 15v 0 20 40 60 80 100 120 0 1 2 3 4 5 t j = 25oc v ge = 20v v ge = 15v v ge = 12v v ge = 10v v ge = 8v 0 10 20 30 40 50 60 0 2 4 6 8 10 12 v ce = 10v t j = 25oc t j = 175oc 0 1 2 3 4 25 50 75 100 125 150 175 i c = 60a i c = 15a i c = 30a v ge = 15v 6/11 2016.01 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH60TK65D l electrical characteristic curves collector to emitter saturation voltage : v ce(sat) [v] gate to emitter voltage : v ge [v] collector to emitter saturation voltage : v ce(sat) [v] gate to emitter voltage : v ge [v] switching time [ns] collector current : i c [a] fig.12 typical switching time vs. gate resistance switching time [ns] gate resistance : r g [ ] fig.9 typical collector to emitter saturation volta ge vs. gate to emitter voltage fig.10 typical collector to emitter saturation volt age vs. gate to emitter voltage fig.11 typical switching time vs. collector current 0 5 10 15 20 5 10 15 20 t j = 25oc i c = 60a i c = 15a i c = 30a 0 5 10 15 20 5 10 15 20 t j = 175oc i c = 60a i c = 15a i c = 30a 10 100 1000 0 10 20 30 40 50 60 t f v cc =400v, v ge =15v r g =10 , t j =175oc inductive oad t d(off) t d(on) t r 10 100 1000 0 10 20 30 40 50 t f t d(off) t d(on) t r v cc =400v, i c =30a v ge =15v , t j =175oc inductive oad 7/11 2016.01 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH60TK65D l electrical characteristic curves fig.13 typical switching energy losses vs. collector current switching energy losses [mj] collector current : i c [a] fig.14 typical switching energy losses vs. gate resistance switching energy losses [mj] gate resistance : r g [ ] fig.15 typical capacitance vs. collector to emitter voltage capacitance [pf] collector to emitter voltage : v ce [v] fig.16 typical gate charge gate to emitter voltage : v ge [v] gate charge : q g [nc] 0.01 0.1 1 10 0 10 20 30 40 50 60 e off v cc =400v, v ge =15v r g =10 , t j =175oc inductive oad e on 1 10 100 1000 10000 0.01 0.1 1 10 100 cies f=1mhz v ge =0v t j =25oc coes cres 0.01 0.1 1 10 0 10 20 30 40 50 e off e on v cc =400v, i c =30a v ge =15v , t j =175oc inductive oad 0 5 10 15 0 10 20 30 40 50 60 v cc =300v i c =30a t j =25oc 8/11 2016.01 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH60TK65D l electrical characteristic curves fig.17 typical diode forward current vs. forward voltage forward current : i f [a] forward voltage : v f [v] fig.18 typical diode reverse recovery time vs. forward current reverse recovery time : t rr [ns] forward current : i f [a] fig.19 typical diode reverse recovery current vs. forward current reverse recovery current : i rr [a] forward current : i f [a] fig.20 typical diode reverse recovery charge vs. forward current reverse recovery charge : q rr [c] forward current : i f [a] 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 t j = 175oc t j = 25oc 0 100 200 300 400 0 10 20 30 40 50 v cc =400v di f /dt=200a/s inductive oad t j = 175oc t j = 25oc 0 5 10 15 20 0 10 20 30 40 50 t j = 175oc t j = 25oc v cc =400v di f /dt=200a/s inductive oad 0 0.5 1 1.5 2 2.5 0 10 20 30 40 50 v cc =400v di f /dt=200a/s inductive oad t j = 175oc t j = 25oc 9/11 2016.01 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH60TK65D l electrical characteristic curves 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 d= 0.5 0.2 0.1 0.01 0.02 0.05 single pulse 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 d= 0.5 0.2 0.1 0.01 0.02 0.05 single pulse fig.21 igbt transient thermal impedance transient thermal impedance : z thjc [oc/w] pulse width : t1[s] fig.22 diode transient thermal impedance transient thermal impedance : z thjc [oc/w] pulse width : t1[s] t1 t2 p dm duty=t1/t2 peak t j =p dm z thjc + t c t1 t2 p dm duty=t1/t2 peak t j =p dm z thjc + t c 10/11 2016.01 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH60TK65D l inductive load switching circuit and waveform vg d.u.t. d.u.t. t r t off 10% 90% t f t d(on) t d(off) gate drive time v ce(sat) 10% 90% t on v ge i c v ce e on 10% e o ff i f di f /dt i rr t rr , q rr fig.23 inductive load circuit fig.24 inductive load waveform fig.25 diode reverce recovery waveform 11/11 2016.01 - rev.a downloaded from: http:///
r1102 a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. notice ro hm cu stome r s upport sy s tem h ttp :// www.r oh m .co m/ co n tact / thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. no tes the information contained herein is subject to change without notice. before you use our products, pl ease contact our sales representative and verify th e la tes t specifica - tion s : alt hou gh rohm is contin uous ly wor ki ng to im pr ove p ro du ct r eli a bility and qualit y, semicon - du c tor s c an bre a k d ow n and ma lf un ct io n du e to var io us f ac to rs. th e re fore, in or der to prevent pe r so nal in ju ry or fi re ar isi ng f ro m fa ilur e, please ta ke sa f ety mea s ur es su ch as com plyin g wi th th e de r at in g ch ara ct er ist ic s, impl e menting redundant and f ir e preve nt ion designs, and u tilizin g ba ck up s a nd f ail - sa fe p ro ce du re s. ro hm shall have no responsibility for any damages arising out of the use of our poducts b ey ond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not gr ant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as ex emplified bel ow), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10)11) 12) 13) 14) downloaded from: http:///

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